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| SMD Type Power Transistor 2SB1275 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High breakdown voltage.(BVCEO = -160V) +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 Typ. 30pF at VCB = 10V High transition frequency.(fT = 50MHZ) +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating -160 -160 -5 -1.5 -3 Collector power dissipation Junction temperature Storage temperature PC Tj Tstg 1 10 150 ?55 to +150 Unit V V V A(DC) A(Pulse) W(Tc=25 ) Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob IC = -50iA IC = -1mA IE = -50iA VCB = -120V VEB = -4V IC/IB = -1A/-0.1A VCE = -5V , IC = -0.1A VCE = -5V , IE = 0.1A , f = 30MHz VCB = -10V , IE =0A , f = 1MHz 82 50 30 Testconditons Min -160 -160 -5 -1 -1 -2 180 MHz pF Typ Max Unit V V V iA iA V hFE Classification TYPE hFE P 82 to 180 3.80 Low collector output capacitance. www.kexin.com.cn 1 |
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